Water-gated organic nanowire transistors

Metal-Gated Junctionless Nanowire Transistors

Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to conventional CMOS FETs. Previous theoretical and experimental works [1][2] on JNFETs have considered polysilicon gates and silicon-dioxide dielectric. However...

Electrolyte-Gated Organic Thin-Film Transistors

There has been a remarkable progress in the development of organic electronic materials since the discovery of conducting polymers more than three decades ago. Many of these materials can be processed from solution, in the form as inks. This allows for using traditional high-volume printing techniques for manufacturing of organic electronic devices on various flexible surfaces at low cost. Many...

Top-gated silicon nanowire transistors in a single fabrication step.

Top-gated silicon nanowire transistors are fabricated by preparing all terminals (source, drain, and gate) on top of the nanowire in a single step via dose-modulated e-beam lithography. This outperforms other time-consuming approaches requiring alignment of multiple patterns, where alignment tolerances impose a limit on device scaling. We use as gate dielectric the 10-15 nm SiO(2) shell natural...

Organic electrochemical transistors based on a dielectrophoretically aligned nanowire array

In this study, we synthesized an organic electrochemical transistor (OECT) using dielectrophoresis of a carbon nanotube-Nafion (CNT-Nafion) suspension. Dielectrophoretically aligned nanowires formed a one-dimensional submicron bundle between triangular electrodes. The CNT-Nafion composite nanowire bundles showed p-type semiconductor characteristics. The drain-source current decreased with incre...

High performance In2O3 nanowire transistors using organic gate nanodielectrics